Samsung 512MB (1x 512MB) CL2.5 DDR-266 PC2100 2.5V DR x8 200-pin SODIMM RAM Module

Samsung 512MB (1x 512MB) CL2.5 DDR-266 PC2100 2.5V DR x8 200-pin SODIMM RAM Module

SKU: M470L6423EN0-CB0

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Product Overview

This 512MB (1x 512MB) DDR 266 MT/s Dual rank, x8 configuration RAM module from Samsung is for use in DDR compatible systems and operates at 266 MT/s with an overall transfer rate of PC2100.

This RAM module also operates at a standard voltage of 2.5V with a CAS Latency of CL2.5, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience.

Technical Specifications
Part No. M470L6423EN0-CB0
Capacity 512MB (1x 512MB)
Brand Samsung
Speed DDR-266 - 266MT/s - PC2100
Voltage 2.5V
Technology DDR
Error Correction Non-ECC
Signal Processing Unbuffered
Form Factor 200-pin SODIMM
Ranks Dual rank
CAS Latency CL2.5
Configuration x8
Pieces in Kit 1


You can verify the compatibility of this RAM module in a number of ways:

  • Use the RamCity Finder to see all guaranteed compatible RAM upgrades for your brand and model system or motherboard
  • Search online to see if this product is on the QVL (Qualified Vendor List) for your system or motherboard
  • Contact one of our Upgrade Evangelists for an expert opinion

Why is the speed of this RAM module shown as 266 MT/s instead of 266 Mhz?

When it comes to measuring DDR RAM speed, MT/s and MHz are used interchangeably, which is not actually correct.

DDR stands for double data rate which means data is transfers on both the rising and falling edges of the clock signal. Meaning that the transfer rate is roughly twice the speed of the I/O bus clock. This RAM module runs at 133MHz per second, but the effective rate is 266 megatransfers per second (MT/s) because there are 133 million rising edges per second and 133 million falling edges per second of a clock signal running at 133 MHz.