Hynix 1GB (2x 512MB) CL4 DDR2-533 PC2-4200 1.8V DR x16 200-pin SODIMM RAM Kit

Hynix 1GB (2x 512MB) CL4 DDR2-533 PC2-4200 1.8V DR x16 200-pin SODIMM RAM Kit

SKU: 2xHYMP564S64BP6-C4

  • $23.98
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Product Overview

This 1GB (2x 512MB) DDR2 533 MT/s Dual rank, x16 configuration RAM kit from Hynix is for use in DDR2 compatible systems and operates at 533 MT/s with an overall transfer rate of PC2-4200.

This RAM kit also operates at a standard voltage of 1.8V with a CAS Latency of CL4, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience.

Technical Specifications
Part No. 2xHYMP564S64BP6-C4
Capacity 1GB (2x 512MB)
Brand Hynix
Speed DDR2-533 - 533MT/s - PC2-4200
Voltage 1.8V
Technology DDR2
Error Correction Non-ECC
Signal Processing Unbuffered
Form Factor 200-pin SODIMM
Ranks Dual rank
CAS Latency CL4
Configuration x16
Pieces in Kit 2


You can verify the compatibility of this RAM kit in a number of ways:

  • Use the RamCity Finder to see all guaranteed compatible RAM upgrades for your brand and model system or motherboard
  • Search online to see if this product is on the QVL (Qualified Vendor List) for your system or motherboard
  • Contact one of our Upgrade Evangelists for an expert opinion

Why is the speed of this RAM kit shown as 533 MT/s instead of 533 Mhz?

When it comes to measuring DDR RAM speed, MT/s and MHz are used interchangeably, which is not actually correct.

DDR stands for double data rate which means data is transfers on both the rising and falling edges of the clock signal. Meaning that the transfer rate is roughly twice the speed of the I/O bus clock. This RAM kit runs at 266MHz per second, but the effective rate is 533 megatransfers per second (MT/s) because there are 266 million rising edges per second and 266 million falling edges per second of a clock signal running at 266 MHz.

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